SiC power devices using silicon carbide SiC epitaxial wafers can operate under high-voltage, heavy current, and at high temperatures compared to mainstream silicon-based semiconductors. These features enable reductions in the number of components and miniaturization of cooling devices, helping to make smaller and lighter power control modules.
SiC power devices also reduce energy loss in the power control process, resulting in a substantial energy savings. SiC-MOSFET requires high surface smoothness as it uses oxide film formed on the surface of epitaxial wafers in device operation. GPTG's SiC epitaxial wafers, having high surface smoothness, are especially valued highly for use in high-performance SiC-MOSFETs.
- GP4N4S4N4-100 mm Development Epitaxy.pdf
- GP4N4S3N3-100 mm Production Epitaxy
- GP4N6S4N4-150 mm Development Epitaxy
- GP4N6S3N3-150 mm Production Epitaxy
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