Global Power's IGBTs (Insulated Gate Bipolar Transistors) are optimized for Switch Mode Power Supply applications offering better VSAT and EOFF. Additionally, this control smoothes the switching waveforms for less EMI.  IGBTs are manufactured using an optimized design process, which offers better control and repeatability of the top side structure, thereby providing tighter specifications.

Our IGBT products offer some of the fastest switching in the market today. Optimized for the design of high efficiency systems in solar inverter, UPS, welder, induction heating and power penetrator applications, engineers around the globe are choosing our products for their power conversion applications.

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Model VCES Fall Time
25C / 125C
IC max
25C / 100C
Package
GPA015A120MN-ND 1200 V 103ns / 195ns 30A / 15A TO-3PN
GPA020A120MN-FD 1200 V 75ns / 120ns 40A / 20A TO-3PN
GPA020A135MN-FD 1350 V 105ns / 235ns 40A / 20A TO-3PN
GPA025A120MN-ND 1200 V 86ns / 168ns 50A / 25A TO-3PN
GPA030A120I-FD 1200 V 70ns / 142ns 60A / 30A TO-247
GPA030A120MN-FD 1200 V 70ns / 142ns 60A / 30A TO-3PN
GPA030A135MN-FDR 1350 V 115ns / 230ns 60A / 30A TO-3PN
GPA040A120L-FD 1200 V 55ns / 115ns 40A / 80A TO-264
GPA040A120L-ND 1200 V 85ns / 189ns 40A / 80A TO-264
GPA040A120MN-FD 1200 V 55ns / 115ns 40A / 80A TO-3PN
GPA042A100L-ND 1000 V 125ns / 160ns 60A / 42A TO-264
GPA060A060MN-FD 600 V 80ns / 90ns 120A / 60A TO-3PN
GPI040A060MN-FD 600 V 55ns / 70ns 80A / 40A TO-3PN
Model VCES Fall Time
25C / 125C
IC max
25C / 100C
Package