Hybrid SiC SBD Modules

This new line of Hybrid SiC SBD concepts will be providing electrical performance and highest reliability without limiting the design flexibility while using SiC Technology. This line of Modules will have a Built-in Converter, Fast Break with SiC SBDs in a 6-Pack IBGT Package. Please review our current line up.

Global Power Technologies Group is advancing the development of silicon carbide (SiC) semiconductor devices.  With an SiC device, higher breakdown voltages and lower on-state resistance can be achieved than with previous generation Si devices.  The on-state resistance of a SiC is lower than that of a Si device having the same breakdown voltage.  For this reason, SiC devices do not necessarily need to be bipolar, which was essential for high-voltage Si devices. Bipolar devices tend to dissipate greater switcihng energy than unipolar devices, reducing efficiency.  Unipolar devices are desirable for reducing the switching energy. Accordingly, the use of a SiC unipolar device enables low on-state resistance and low switching energy to be achieved simultaneously. 

Download a datasheet from the list below:

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Model Ic[A]
@Tc=80C
Vcesat[V]
@Tc=25C
Esw[mJ]
@125C
Package Description
GHIS075A120T2P2 75 A 1.9 V 12.4 mJ T2 Econo3 1200V, 150A, Half BRIDGE, TRENCH IGBTs, SiC SBD Freewheeling Diode
GHIS050B120T1P2 50 A 1.9 V 50.2 mJ T1 Econo2 1200V, 100A, Half BRIDGE, TRENCH IGBTs, SiC SBD Freewheeling Diode
GHIS050A120T1P2 50 A 1.9 V 50.2 mJ T1 Econo2 1200V, 75A, Half BRIDGE, TRENCH IGBTs, SiC SBD Freewheeling Diode
GHIS040B120T1P2 40 A 1.9 V mJ T1 Econo2 1200V, 100A, 6-PACK, TRENCH IGBTs w/ NTC, SiC SBD Freewheeling Diode
GHIS040A120T1P2 40 A 1.9 V 50.2 mJ T1 Econo2 1200V, 75A, REC+BREAK+6-PACK, TRENCH IGBT, SiC SBD Boost Diode
GHIS025A120T1P2 25 A 1.9 V 56.3 mJ T1 Econo2 1200V, 50A, REC+BREAK+6-PACK, TRENCH IGBT, SiC SBD Freewheeling Diode
GHIS200A120S3B1 200 A 1.8 V 46.1 mJ S3 62mm 600V, 50A, REC+BREAK+6-PACK, STRD IGBT, SiC SBD Boost Diode
GHIS150A120S3B1 150 A 1.8 V 27.2 mJ S3 62mm 1200V, 50A, REC+BREAK+6-PACK, TRENCH IGBT, SiC SBD Boost Diode
GHIS100A120S2B1 100 A 1.9 V 22.4 mJ S2 34mm 1200V, 40A, REC+BREAK+6-PACK, TRENCH IGBT, SiC SBD Boost Diode
GHIS075A120S2B1 75 A 1.9 V 14.3 mJ S2 34mm 1200V, 40A, REC+BREAK+6-PACK, TRENCH IGBT, SiC SBD Boost Diode
GHIS050A060B3P2 50 A 1.8 V 1.95 mJ B2 EasyPIM2 600V, 30A, REC+BREAK+6-PACK, STRD IGBT, SiC SBD Boost Diode
GHIS030A060B2P2 30 A 1.8 V 0.85 mJ B2 EasyPIM1 600V, 30A, REC+BREAK+6-PACK, STRD IGBT, SiC SBD Boost Diode
GHIS030A060B1P2 30 A 1.8 V 0.85 mJ B1 Flow 0 1200V, 25A, REC+BREAK+6-PACK, TRENCH IGBT, SiC SBD Boost Diode
GHIS020A060B1P2 20 A 1.8 V 0.7 mJ B1 Flow 0 600V, 20A, REC+BREAK+6-PACK, STRD IGBT, SiC SBD Boost Diode
GHIS100A120T2C1 100 A 1.9 V 19.6 mJ T2 Econo3 1200V, 100A, REC+BREAK+6-PACK, TRENCH IGBT, SiC SBD Boost Diode
GHIS100A120T2P2 100 A 1.9 V 19.6 mJ T2 Econo3 1200V, 200A, Half BRIDGE, TRENCH IGBTs, SiC SBD Freewheeling Diode
GHIS080A060S1-E1 80 A 2.0 V mJ COPACK 600V, 80A, Field StopTrench Fast IGBT, SiC SBD Freewheeling Diode
GHIS060A120S1-E1 60 A 2.0 V 7.6 mJ SOT-227 1200V, 60A, High Speed Switching IGBTs, SiC SBD Freewheeling Diode
GHIS080A120S1-E1 80 A 2.0 V 7.1 mJ SOT-227 1200V, 800A, High Speed Switching IGBTs, SiC SBD Freewheeling Diode
GHIS100A120S1-E1 100 A 1.8 V (tbd) mJ SOT-227 1250V, 100A, High Speed Switching IGBTs, SiC SBD Freewheeling Diode
Model Ic[A]
@Tc=80C
Vcesat[V]
@Tc=25C
Esw[mJ]
@125C
Package Description