The superior properties of SiC (wide bangap and high thermal conductivity) enable SiC metal oxide field effect transistors (MOSFETs) to operate at higher voltage and with higher efficiency than silicon switches, both MOSFETs and insulated gate bipolar transistors (IGBTs). GPTG SiC MOSFETs feature very low RDS,ON with excellent switching performance, which improves efficiency and reduces footprint. Compared with silicon MOSFETs, SiC MOSFETs have lower specific on-state resistance. Compared with best-in-class 1200 V silicon IGBTs, SiC MOSFETs with lower RDS,ON switch faster across the full temperature range. The efficiency of GPTG SiC MOSFETs simplifies the thermal design of power electronic systems.
GPTG SiC MOSFETs feature low on-resistance, high speed switching and low capacitance. The positive temperature coefficient of resistance makes them easy to parallel. They enable higher system efficiencies at higher switching frequencies and with substantially lower heat generation. These products are ideal for motor drives, switch mode power supplies, solar inverters and dc/dc converters.
|GP1T080A120B||1200 V||32 A||80 mΩ|