Advantages of Silicon Carbide

Silicon carbide (SiC) is a wide bandgap semiconductor material that enables higher performance power devices compared to conventional silicon based components, and is available over a wider range of voltage and current than gallium nitride (GaN) based devices.  Silicon carbide's combination of wide bandgap (3.26 eV), high critical field (3x106 V/cm) and high thermal conductivity (4.9 W/mK) results in power semiconductor devices which are more efficient, run cooler and drive reductions in system cost, volume and weight.

Our SiC MOSFET Modules offer Ultra low losses, zero reverse recovery currents, zero turn-off Taill currents and high frequency operation for unparalleled performance with the highest efficiencies. 

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Model Drain Source Voltage Resistance Drain Current Package
GCMS020A120B1H1 1200 V 20 mΩ 160 A 66.2 x 31 x 20.8mm
GCMS040A120S1?E1 1200 V 40 mΩ 60 A SOT-227
GCMS040A120B1H1 1200 V 40 mΩ 80 A 66.2 x 31 x 20.8mm
GCMS020A120S1?E1 1200 V 20 mΩ 120 A SOT-227
GCMS012A120S1?E1 1200 V 12.5 mΩ 200 A SOT-227
GCMS010A120S7B1 1200 V 10 mΩ 240 A 105.7 x 60.7 x 18.1mm
GCMS007A120S7B1 1200 V 7 mΩ 360 A 105.7 x 60.7 x 18.1mm
GCMS004A120S7B1 1200 V 4.2 mΩ 480 A 105.7 x 60.7 x 18.1mm
GCMS080A120B3C1 1200 V 80 mΩ 40 A 62.8 x 56.7 x 16.5mm
GCMS080A120B3C1 1200 V 20 mΩ 95 A 66.2 x 31 x 16.3mm
GCMS080A120B1H1 1200 V 80 mΩ 40 A 66.2 x 31 x 20.8mm
GCMS040A120B1H1 1200 V 40 mΩ 42 A 66.2 x 31 x 15.8mm
GCMS020A120B3C1 1200 V 20 mΩ 160 A 62.8 x 56.7 x 16.5mm
GCMS040A120B3C1 1200 V 40 mΩ 80 A 62.8 x 56.7 x 16.5mm
GCMS008A120B1B1 1200 V 8 mΩ 300 A 31 x 66 x 12mm
GCMS040A120S1?E1 1200 V 40 mΩ 40 A SOT-227
GCMS080A120S1?E1 1200 V 80 mΩ 20 A SOT-227